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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ355 P-CHANNEL MOS FET FOR HIGH SWITCHING The 2SJ355 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. PACKAGE DIMENSIONS (in mm) 4.5 0.1 1.6 0.2 1.5 0.1 FEATURES * Can be directly driven by 5-V IC * Low ON resistance RDS(on) = 0.60 MAX. @VGS = -4 V, ID = -1.0 A RDS(on) = 0.35 MAX. @VGS = -10 V, ID = -1.0 A 0.8 MIN. S 0.42 0.06 1.5 D G 0.47 0.06 3.0 0.42 0.06 4.0 0.25 0.41 +0.03 -0.05 EQUIVALENT CIRCUIT Drain (D) PIN CONNECTIONS S: Source Internal D: Drain diode G: Gate Gate (G) Gate protection diode Source (S) 2.5 0.1 Marking: PQ ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW 10 ms Duty cycle 1 % 16 cm2 x 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING -30 -20/+10 2.0 4.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.0 150 -55 to +150 W C C The internal diode connected between the gate and source of this product is to protect the product from static electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect a protection circuit. Take adequate preventive measures against static electricity when handling this product. The information in this document is subject to change without notice. Document No. D11217EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 2SJ355 ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Input Charge Gate to Source Charge Gate to Drain Charge Internal Diode Reverse Recovery Time Internal Diode Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD trr Qrr VDS = -24 V, VGS = -10 V, ID = -1.8 A, IG = -2 mA IF = 2.0 A, di/dt = 50 A/s VDD = -25 V, ID = -1.0 A VGS(on) = -10 V RG = 10 , RL = 25 TEST CONDITIONS VDS = -30 V, VGS = 0 VGS = -16/+10 V, VDS = 0 VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.0 A VGS = -4 V, ID = -1.0 A VGS = -10 V, ID = -1.0 A VDS = -10 V, VGS = 0, f = 1.0 MHz -1.0 1.0 0.50 0.26 300 245 120 5.5 32 110 130 12.2 1.2 4.6 95 85 0.60 0.35 -1.5 MIN. TYP. MAX. -10 10 -2.0 UNIT A A V S pF pF pF ns ns ns ns nC nC nC ns nC TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 -10 -5 FORWARD BIAS SAFE OPERATING AREA 1 dT - Derating Factor - % 80 10 m s ID - Drain Current - A m -2 -1 -0.5 -0.2 -0.1 -0.05 -0.5 Single pulse s 60 PW = 10 0 40 DC m s 20 0 25 50 75 100 125 TA - Ambient Temperature - C 150 -1 -2 -5 -10 -20 -50 -100 VDS - Drain to Source Voltage - V 2 2SJ355 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -5 Pulsed -4 0V TRANSFER CHARACTERISTICS -10 VDS = -10 V Pulsed -1 ID - Drain Current - A TA = 150 C TA = -25 C TA = 0 C TA = 25 C TA = 75 C ID - Drain Current - A -1 -4 .5 V -4.0 V -0.1 -0.01 -0.001 -3 -3.5 V -2 -3.0 V -1 -2.5 V VGS = -2.0 V 0 -1 -2 -3 -4 VDS - Drain to Source Voltage - V -5 -0.0001 -0.00001 -1 -2 -3 -4 VGS - Gate to Source Voltage - V 10 |yfs| - Forward Transfer Admittance - S RDS(on) - Drain to Source On-State Resistance - FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = -10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 VGS = -4 V Pulsed 0.8 TA = 150 C 0.6 TA = 75 C TA = 25 C 1 TA = -25 C 0.1 TA = 0 C TA = 25 C TA = 75 C TA = 150 C 0.01 0.4 TA = 0 C 0.2 TA = -25 C 0.001 -0.0001 -0.001 -0.01 -0.1 ID - Drain Current - A -1 0 -0.001 -0.01 -0.1 -1 ID - Drain Current - A -10 RDS(on) - Drain to Source On-State Resistance - 0.6 VGS = -10 V Pulsed RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 Pulsed 0.8 0.4 TA = 150 C TA = 75 C TA = 25 C 0.6 ID = 2.0 A 0.4 0.2 TA = 0 C TA = -25 C 0.2 ID = 1.0 A 0 -0.001 -0.01 -0.1 -1 ID - Drain Current - A -10 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 VGS - Gate to Source Voltage - V 3 2SJ355 SOURCE TO DRAIN DIODE FORWARD VOLTAGE -10 ISD - Diode Forward Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 Ciss, Coss, Crss - Capacitance - pF VGS = 0 Pulsed -1 1 000 Ciss Coss 100 Crss VGS = 0 f = 1 MHz -10 VDS - Drain to Source Voltage- V -100 -0.1 -0.01 -0.001 -0.0001 -0.2 -0.4 -0.6 -0.8 -1.0 VSD - Source to Drain Voltage - V -1.2 10 -1 SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time -ns REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1 000 trr - Reverse Recovery Time - ns VDD = 25 V VGS(on) = -10 V VGS = 0 di/dt = 50 A/ s 100 tf td(off) tr 100 10 td(on) 0 -0.1 -1 ID - Drain Current -A -10 10 -0.1 -0.5 -1 -5 IF - Diode Forward Current - A -10 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(j-a) - Transient Thermal Resistance - C/W 1 000 Single Pulse Using ceramic board of 7.5 cm2 x 0.7 mm 100 10 1 1m 10 m 100 m 1 PW - Pulse Width -s 10 100 4 2SJ355 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 2SJ355 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2 |
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